BASIC ELECTRONICS
EC 233 No. of hrs/week = 03+03
No. of credits = 04
1. Semiconductor Diodes : The P - N junction, ratings, space charge, depletion layer, diffusion capacitance, switching and high frequency effects, LED's. 6 hrs
2. POWER SUPPLIES : Rectifiers, filters, output impedance, voltage regulators. 6 hrs
3.THE JUNCTION TRANSISTOR : Common base and common emitter characteristics, active, saturated and cut off voltage, transfer characteristic, common collector configuration, switching and high frequency effects. 6 hrs
4. FIELD EFFECT TRANSISTOR : Junction FET, MOSFET, IGFET, Dynamic parameters, saturation and cut off, switching speed and high frequency effects. 6 hrs
5. AMPLIFIERS : Common source, common drain and common gate FET amplifiers, low frequency junction transistor models, h - parameters, analysis using h - parameters. Biasing and stabilization of FETS, biasing and stability of transistors, high frequency operation of FET, high frequency model for transistor, hybrid pi-parameters, frequency response of single stage amplifier, cascade amplifier, input & output impedances, bandwidth, direct coupled amplifiers & differential amplifiers. 10 hrs
6. SCR, DIAC and TRIAC, their characteristics and simple applications. 6 hrs
References :
Analysis and Design of integrated Electronic Circuits - Dy Paul M.Chirlian (Harper International Educational Edition, 1987).
EC 233
1. Diode characteristics, measurement of forward and reverse resistances for Germanium & Silicon diodes.
2. Transistor characteristics, 'h' parameters for CE and CB configuration.
3. Characteristics of SCR.
4. Characteristics of UJT.
5. Characteristics of FET.
6. Characteristics of Photo-transistor and light dependent resistor.
7. Characteristics of Thermistor.
8. Bridge rectifier.
9. Regulated power supply using a Zener diode.
10. Frequency response of a RC-coupled transistor amplifier (CE configuration).