ELECTRONIC DEVICES & CIRCUITS

EC 241                                                                                 No.of hrs./week= 03+03

                                                                                                No. of credits = 04

 

1. Diodes :

The ideal diode: – Current -Voltage characteristic, diode logic gates.

Terminal characteristic of Junction diodes – Forward bias region, Reverse bias region, Break down region.

Modeling of the diode forward characteristic – exponential model, graphical analysis using the exponential model, iterative analysis using the exponential model, the need for rapid analysis, the piecewise - linear model, Constant – Voltage – Drop model, Ideal – Diode model, small – signal model, use of the diode forward drop in voltage regulation.

Operation in the reverse breakdown region :– Zener diode, use of Zener as shunt regulator, temperature effects.

Rectifier circuits: – half wave rectifier, full wave rectifier, bridge rectifier, rectifier with a filter capacitor – the peak rectifier, precision half wave rectifier – the super diode.

Limiting and clamping circuits: – limiter circuits, clamped capacitor or dc restorer, voltage doublers.

Special diodes: – Schottky – barrier diode (SBD), Varactor, photo diodes, LEDs.     10 hrs

 

2. Bipolar Junction Transistors:

Device structure and physical operation :- simplified structure and modes of operation, operation of the npn transistor in the active mode, structure of actual transistors, Ebers – Moll model, operation in the saturation mode, the pnp transistor.

Current – Voltage characteristic :– Circuit symbols and conventions, graphical representation of transistor characteristics, dependence of  on the Collector Voltage - The Early effect, Common –Emitter characteristic, transistor breakdown.

BJT as an Amplifier and Switch :– Large signal operation – the transfer characteristic, amplifier gain, Graphical analysis, operation as a switch.

Biasing in BJT amplifier circuits :– The classical discrete – circuit bias arrangement, a Two – Power – Supply version of the classical bias arrangement, biasing using  Collector – to – Base Feedback Resistor, biasing using a Constant – Current source.

Transistor at low frequency :– graphical analysis of the CE configuration, two port devices and hybrid model, transistor hybrid model, the h-parameters, conversion formulas for the parameters of the three transistor configurations, analysis of a transistor amplifier circuit using h – parameters, emitter follower, comparison of transistor amplifier configuration, linear analysis of a transistor circuit, miller’s theorem and its dual, cascading transistor amplifiers, simplified common – emitter hybrid model, simplified calculation for the common – collector configuration, the common – emitter amplifier with an emitter resistance, High – input - resistance transistor circuits references.            

 

Power Amplifiers – Types. Qualitative analysis of power amplifiers        14 hours

 

3. MOS filed effect transistors (MOSFET):

Device structure and physical operation – device structure, operation with no gate voltage, creating a channel for current flow, applying a small , operation as  is increased, Derivation of - relationship, p- channel MOSFET, complementary MOS or CMOS, Operating the MOS transistor in the sub threshold region.

Current - Voltage characteristic – Circuit symbol, - characteristic, , finite output resistance in saturation, characteristics of the p-channel MOSFET, Role of the substrate – body effect, temperature effects, breakdown and input protection.

MOSFET as a amplifier and as a Switch – Large signal; operation – the transfer characteristic, graphical derivation of the transfer characteristic, Operation as switch, operation as a linear amplifier.

Biasing the MOS amplifier circuits – Biasing by fixing ,  biasing by fixing  and by connecting a resistance in the source, biasing by connecting a drain to source resistor, biasing by using constant current source.

 

Small signal equivalent circuit.

 

Single stage MOS amplifiers – the basic structure, characterizing amplifiers, common -  source amplifier, common - source amplifier with a source resistance, common - drain or source - follower amplifier.

 

Depletion type MOSFET

 

Comparison of FET and BJT – typical values of MOSFET parameters, typical values of IC BJT parameters, comparison of important characteristic, combining MOS and BJT – BiCMOS circuits.                                                                                                         14 hours

 

4. Operation amplifiers:

The ideal Opamp – op-amp terminals, function and characteristic of the ideal op-amp, differential and common- mode signals.

Inverting configuration – Closed loop gain, effect of finite open-loop gain, input and output resistance, weighted summer, phase shifter.

Non inverting configuration – closed – loop gain, characteristics of the non – inverting configuration, effect of finite open – loop gain, voltage follower.

Difference amplifiers – single op-amp difference amplifier, Instrumentation amplifier.

Large signal operation of op-amps:– output voltage saturation, output current limits, slew rate, full – power bandwidth.

DC imperfections:– offset voltage, input bias and offset currents.

Integrators and differentiators:– inverting configuration with general impedance, the inverting integrator, op-amp differentiator.

 

Op-amp Astable and Monostable multivibrator, Schmitt trigger circuit, function generator.

                                                                                                                                 10 hours

5. Timer IC: – 555 circuit, astable and mono stable multivibrator, VCO, time delay circuits.                                                                                                                                                              2 hours

 

Reference Books :

  1. A.S.Sedra & K.C Smith , Microelectronics, 5th Edition, Oxford University Press.
  2. J.Millman & C.C.Halkias , Integrated Electronics, TMH edition.
  3. R.L.Boylestad & L.Nashelsky , Electronic Devices and Circuit Theory,  PHI edition.
  4. A.P.Malvino , Electronic Principles, GMH edition.
  5. Paul M.Chirlian, Analysis and Design of Integrated Electronic Circuits ,John Wiley.
  6. David A.Bell , Electronic devices & Circuits , PHI.
  7. Jacob Millman , Microelectronics: Digital and Analog Circuits and Systems , McH.
  8. Ramakant A.Gayakwad , Op-Amps and Linear Integrated Circuits , PHI.
  9. Jacob , Applications and design with analog integrated circuits , PHI.

     10.  Roy and Choudhary Linear ICs

     11.  Donald A Neamen , Electronic Circuit Analysis and Design

 

ELECTRONICS DEVICES & CIRCUIT LAB

 

Experiment 1: Diode V – I Characteristic, R – C Low pass filter, center tapped diode rectifier with & without R-C low pass filter.

Experiment 2: Diode clipper, clamper, voltage doubler, logic gates.

Experiment 3:Zener diode V – I characteristic, Zener shunt regulator, series voltage regulator.

Experiment 4: Characteristics of photodiodes, circuits using photodiodes, LEDs and Varactor diodes.

Experiment 5: Transistor input and output characteristic, transistor as a switch, transistor as a amplifier (R – C coupled amplifier)

Experiment 6: MOSFET input and output characteristic, FET amplifier, FET as a voltage variable Resistor.

Experiment 7: Opamp application: Inverting and non inverting amplifier, difference amplifier, Integrator, differentiator, adder, astable multivibrator, waveform generation.

Experiment 8: Timer 555 application: Astable & Monostable multivibrator, time delay circuits, VCO.

Experiment 9, 10, 11: Experiments on Spice simulation of above circuits.

       Circuits will be built using either spring board or bread board.